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Storage class memories (SCMs); for instance, (STT-)MRAM, ReRAM, PRAM, and 3D XPoint, have much attention from storage systems. Each SCM has different characteristics, such as read/write latency, endurance, and bit cost. For example, MRAM has short latency and high endurance, but its cost is high. In contrast, ReRAM, PRAM, and 3D XPoint have lower endurance, but their cost is lower than MRAM. From...
Data-retention characteristics of 3-dimensional (3D) NAND flash memory have been evaluated with the optimal Vref (read reference voltage) shift in comparison with 2-dimentional (2D) (1Xnm) NAND flash memory. Bit-error rate (BER) of data-retention and write/erase (W/E) cycling in 3D NAND flash are much smaller than that in 2D NAND flash. Also, in 3D NAND flash, BER of Bottom Word-line is 1.9-times...
This paper summarizes the scaling challenges of the conventional 2D floating-gate cell NAND flash memories [1, 2]. The scaling trends and limits of the bulk and SOI NAND flash memories are investigated in terms of short channel effects and channel boosting leakage from 20nm to below 10nm generation using 3D-device simulation. In the bulk NAND cell, 13nm generation is the scaling limit for realizing...
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