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An analytical model for high voltage Thin-film Silicon-On-Insulator (TSOI) lateral devices is proposed in this paper. A new Reduced SURface Field (RESURF) criterion is obtained for TSOI lateral devices with a lateral linear doping in the drift region. The optimum drift doping profile for TSOI lateral devices can be obtained from the new RESURF criterion. The analytical results are in good agreement...
A novel SOI high voltage device with compound dielectric buried layer (CDL SOI) and its analytical model is proposed. The vertical electric field of buried layer is enhanced due to the low k (permittivity) of dielectric layer and the electric field in the drift region is modulated by the compound dielectric layer with different k, and both increases breakdown voltage of device. The electric field...
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