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In this paper, a 620–690GHz sub-harmonic mixer using monolithic GaAs integrated schottky diodes is presented in order to remove the mismatch caused by manual assembly of the flip chip diode. The monolithic microwave integrated circuit integrates a Schottky anti-parallel diodes pair in a longitudinal configuration. We mostly analyzed the influence caused by diode position offset and conductive adhesive...
In this paper, a terahertz wideband sub-harmonic mixer based on the Schottky anti-parallel diodes pair and MASTER technology is presented. The mixer circuit is fabricated on a 0.05mm quartz substrate including Schottky anti-parallel diodes pair, RF/LO transition, IF matching networks and filtering circuits. The diode circuit is fabricated on a quartz substrate directly by MASTER technology. The research...
The positive and negative gate-bias effect on ESD robustness of NMOS devices are analyzed respectively in this paper. The influence of gate-bias have been simulated by ISE TCAD and discussed. The simulation results indicate that the triggering voltage fell from 10.46 V to 7.8 V with the negative gate bias changed from 0 V to -10 V, and reduced from 10.46 V to 5.92 V with the positive gate bias changed...
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