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The GaN:Er thin film has been prepared by direct current (DC) planar magnetron sputtering method. The film was characterized by X-ray diffraction (XRD), Raman, Fourier transform infrared (FTIR) absorption, ultraviolet–visible (UV–vis) and photoluminescence (PL) spectra. XRD and Raman spectrum show the structure of the film is amorphous. FTIR result indicates that the main absorbance of the film is...
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