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Polycrystalline SnS thin films have been prepared by a modified SILAR (successive ionic layer adsorption and reaction) method, in which certain quantity of NH 4 Cl was added to the cation precursor solution. The films have a novel zinc blende structure. The obtained SnS films are slightly rich in Sn component. There are small amounts of O impurity existing in the films, but no other impurity...
High quality polycrystalline silicon (poly-Si) thin films without Si islands were prepared by using aluminum-induced crystallization on glass substrates. Al and amorphous silicon films were deposited by vacuum thermal evaporation and radio frequency magnetron sputtering, respectively. The samples were annealed at 500 °C for 7 h and then Al was removed by wet etching. Scanning electron microscopy shows...
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