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An 80 W balanced GaN-HEMT power amplifier for 2.45–2.70 GHz using branch-line couplers is presented in this paper. Its performance is compared to a single-transistor solution. The analysis shows that a balanced amplifier is favorable because it simplifies measures to ensure electrical stability and allows better heat sinking.
This paper presents a GaAs Doherty power amplifier (DPA), designed and implemented at 5.6 GHz, for WiMAX applications. The designed DPA uses two identical 1 W packaged GaAs HEMTs for the main and peaking amplifiers. A maximum output power of 34.4 dBm (2.8 W) was measured, with a maximum power-added efficiency of PAE = 31% (η = 42%). The efficiency was maintained higher than PAE = 23% (η = 29%), over...
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