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This paper proposes a topology optimization method for dual-threshold (DT) independent-gate (IG) FinFET circuits. In the proposed method, a node extraction algorithm is developed to extract the characteristic nodes of a BDD expression, which are suitable to be realized with the compact logic gates based on the DT IG FinFET devices, and then the equivalent replacement program that these extracted characteristic...
SRAMs play an important role for VLSI's performances. However, with the reduction of IC's feature size and power supply voltage, the reading and writing stability of the storage cells has been decreasing. This paper presents two novel seven transistor SRAM cells based on Dual-Threshold (DT) Independent-Gate (IG) FinFETs. The read and write operations are separated by adding a high threshold IG FinFET...
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