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SRAMs play an important role for VLSI's performances. However, with the reduction of IC's feature size and power supply voltage, the reading and writing stability of the storage cells has been decreasing. This paper presents two novel seven transistor SRAM cells based on Dual-Threshold (DT) Independent-Gate (IG) FinFETs. The read and write operations are separated by adding a high threshold IG FinFET...
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