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We utilize the electric peak field at the PN junction of a Poly-PiN-diode to optimize the potential distribution for a thin-SOI-layer LDMOS. The location and the height of the peak field is free to be set at any position and value along the drift region by adjusting the doping profile in the polysilicon. Therefore, the Poly-PiN-diode allows excellent flexibility for device potential optimization compared...
We propose a novel vertical metal oxide semiconductor device with high permittivity (HK) trenches interleaved inside of the drift region (HKMOS). The novel structure guarantees uniform potential distribution for a wide voltage range at the blocking state owing the potential modulation effect of HK trenches, which also introduce accumulation effect to significantly reduces the specific on-resistance...
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