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By using sidewall electrode technology, both record small functional TiO2 selection device (1 × 5 nm2) and HfO2 based RRAM device (1 × 3 nm2) were for the first time successfully demonstrated in this work, improving the understanding of the switching mechanism in an ultra-small, functional resistive random access memory (RRAM) device. The tunneling based low temperature back-end selection devices...
By using appropriate the material of gate electrode in metal-oxide-semiconductor structure, a Si-based photodetector for ultraviolet light (319 nm) detection has been demonstrated. Due to the spectral dependence of absorption coefficients of the Ag as gate electrode, the narrow-band detection of ultra violet can be achieved. The Ag photodetector exhibits maximum responsivity value of 5.59 mA/W at...
The blockage of the hole transport due to the excess hole in SiGe quantum dots was observed in the metal-oxide-semiconductor (MOS) tunneling diodes for the first time. The hole tunneling current from Pt gate electrode to p-type Si dominates the inversion current at the positive gate bias and is seven order of magnitude higher than the Al gate/oxide/p-Si device. The SiGe quantum dots confine the excess...
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