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The More Electric Aircraft (MEA) concept has set tight constraints for power density and efficiency of electromechanical actuators in aircraft applications. In order to comply with these high power standards, new wide-bandgap (SiC and GaN) semiconductor devices may be exploited. Unfortunately, the extremely short switching times of these devices can easily trigger high frequency ringing voltage at...
Wide-bandgap devices are under the spotlight of scientific research as they exhibit great performance in terms of efficiency and temperature operation. However, to fully exploit their characteristics, dedicated driving circuits are needed. High-power gate-insulated switching devices exhibit important input capacitance; when fast switching speeds are demanded, high-current pulses are needed to drive...
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