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In this study, the p-SiC/i-Si/n-Si cell and the p-SiC/i-SiGe/n-Si cell deposited using plasma-enhanced chemical vapor deposition were cascaded for forming the tandem Si-based thin film solar cells to absorb the wide solar spectrum. To further improve the performances of the tandem Si-based thin film solar cells, a 5-nm-thick n+-microcrystalline-Si (n+-μc-Si) tunnel layer deposited...
The laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) system was proposed to deposit high performance and high stability Si-based thin-film solar cells. In the LAPECVD system, the CO2 laser and plasma were simultaneously utilized to effectively decompose the SiH4 reaction gas. Consequently, the hydrogen concentration in the i-Si absorption film was reduced with an increase of CO2...
SiGe based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated, in which the SiGe channel layer was deposited by using laser-assisted plasma-enhanced chemical vapor deposition (LAPECVD) system. The characteristics were compared with the device without laser assistance.
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