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A comparison study on electrical performance of Ge pMOSFETs with a GeOx passivation layer formed by ozone post oxidation (OPO) and plasma post oxidation (PPO) is performed. PPO and OPO were carried out on an Al2O3/n-Ge (001) substrate followed by a 5-nm HfO2 gate dielectric in situ deposited in an ALD chamber. The quality of the dielectric/Ge interface layer was characterized by X-ray photoelectron...
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