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BF2+ implant was performed on Ge1−xSnx epitaxial layers where x is 0.03 or 0.053. The implant depth for BF2+ implant into Ge1−xSnx alloys is larger as compared to the same implant into Ge. It is observed that the diffusion of B during a rapid thermal annealing (RTA) is substantially suppressed by the presence of Sn. Sheet resistance measurements show that the B atoms can be activated at 400 °C in...
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