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In this paper, we propose new structures of lateral bipolar junction transistor (LBJT) on silicon on insulator (SOI) with improved performance. The proposed devices are lateral bipolar transistors with multi doping zone collector drift region and a thick buried oxide under the collector region. Calibrated simulation studies have revealed that the proposed devices have higher breakdown voltage than...
A novel structure of lateral bipolar junction transistor (LBJT) on selective buried oxide (SELBOX) is proposed. A 2D numerical simulation study using MEDICI has revealed that the proposed device gives a unique performance when the SELBOX is fully covering emitter and base regions and is of the length equal to the sum of lengths of emitter and base regions. For such a placement of SELBOX, a sharp increase...
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