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In this paper, a comparative study on the switching characteristics and power losses in GaN and SiC vertical junction field effect transistors (VJFETs) is presented. Models of VJFETs based on GaN and SiC, were separately built in Sivaco ATLAS and applied to a mixedmode device/circuit simulator for dynamic evaluation under identical test conditions. The device figure of merit (RonQg) of GaN VJFET is...
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