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DC-Step-Stress-Tests of GaN HEMTs have been performed on wafers with and without GaN-cap. The tests consist of a step ramping of drain-source voltage VDS by 5 V every two hours at off-state. The irreversible evolution of leakage current starting at a certain drain voltage has been taken as a criterion for the onset of device degradation. It has been stated that there is a stability limit for VDS depending...
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