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The different empirical models of light absorption in silicon by free charge carriers in near-infrared and infrared regions are analyzed. An improved empirical model for free carrier absorption in silicon is developed. Results are obtained over the wavelength range from 0.9 μm to 6 μm for n-type, and from 0.9 μm to 8 μm for p-type silicon. The new model is assessed ed by R2 parameter and the sufficient...
A mathematical model for analyzing laser beam transmission and focusing inside media is developed. The reflection and refraction on the interface between two different media and the absorption inside media are considered. Based on the mathematical model a computer program, which allows us to analyze the focusing and transmission processes of laser beam as well as to obtain the beam parameters and...
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