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We report the damage properties of the He+ ions implanted Nd:YVO4 crystal. Implantation was carried out at room temperature by He+ ions at the doses of 1×1016, 2×1016, and 4×1016 ions/cm2 with the energy of 200keV. The depth of the damage region is about 0.85μm beneath the surface. Rutherford backscattering spectrometry (RBS)/channeling technique was used to investigate the damage profile of ions...
KTP crystal is firstly implanted by 2MeV He+ at room temperature to form a damage layer at a depth of about 6μm. A Cr coating patterned with periodical open strips is then deposited on the sample surface. Ion exchange is carried out in a selected ratio Ba(NO3)2/RbNO3 solution at 340°C for 30mins. An enhanced index region surrounded by damage layer and virgin KTP is obtained by Rb+/K+ exchange. Channel...
A dose of 8 × 1016 ions/cm2 He+ ions has been implanted into a z-cut KTP crystal with energy of 150 KeV at room temperature. The refractive index profile has been measured by the Model 2010 Prism Coupler at room temperature and after annealed at temperature of 200°C, 300°C and 400°C. The surface effective refractive index also has been obtained. The results show that the surface effective refractive...
KTP planar optical waveguide was fabricated by combining He+ ion implantation with Rb-K ion exchange in pure RbNO3. The refractive index profiles in the novel waveguide were reconstructed by analyzing dark mode spectra. The influence of irradiation damage on the Rb distribution was investigated by means of RBS technique.
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