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Amorphous indium-gallium-zinc-oxide thin film transistor (a-IGZO TFT) was used as active driving device for ZnO nanowire field emitters. The characteristics of ZnO FEAs controlled by a-IGZO TFT were studied. Low driving voltage, precise control and stabilization of field emission current are achieved.
Amorphous indium-gallium-zinc-oxide thin film transistor (a-IGZO TFT) with offset structure is fabricated for active-driving of ZnO nanowire field emitters. ZnO nanowire field emitters grown by thermal oxidation method is integrated with the a-IGZO TFT. The results proved that the growth process of ZnO nanowires is compatible with the a-IGZO TFT fabrication process.
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