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We study the growth of GaN crystal on Si substrate by molecular beam epitaxy (MBE), in order to integrate GaN light source and MEMS monolithically Since the lattice constant of HfN is close to that of GaN (only 0.35% mismatch), the crystal growth of GaN on HfN film is superior. On the other hand, HfO2 film is a good candidate for waveguide, dielectric and sacrificial layer. In this study, HfO2 film...
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