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This work highlights the features of Z2-FET capacitorless 1T-DRAM describing its operation in detail. The Z2-FET memory cell fabricated with FDSOI technology delivers large current sense margin along with long retention time at room temperature. Numerous measurements confirm that the demonstrated 1T-DRAM is able to achieve attractive current margin even with 0.5 V programming voltage. For this case,...
Highly reconfigurable FD-SOI diodes with electrostatic doping controlled by gate bias are presented experimentally for the first time. Measurements show that the virtual p-n junction with gate-induced free carriers exhibits diode-like characteristics. A clear advantage of the virtual diode is that the doping levels are adjustable by the front and back gate biases. This flexibility enables the tuning...
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