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We analyze the impact of oxide thickness variations on hot-carrier degradation. For this purpose, we develop an analytical approximation of our hot-carrier degradation (HCD) model. As this approximation is derived from a physics-based model of HCD, it considers all the essential features of this detrimental phenomenon. Among them are the interplay between single- and multiple-carrier mechanisms of...
We propose and verify a model for hot carrier degradation based on the exhaustive evaluation of the energy distribution function for charge carriers in the channel by means of a full-band Monte-Carlo device simulator. This approach allows us to capture the interplay between “hot” and “colder” electrons and their contribution to the damage build-up. In fact, particles characterized by higher energy...
Using a physics-based model for hot-carrier degradation we analyze the worst-case conditions for long-channel transistors of two types: a relatively low voltage n-MOSFET and a high-voltage p-LDMOS. The key issue in the hot-carrier degradation model is the information about the carrier energetical distribution function which allows us to assess the carrier acceleration integral determining the interface...
Partially-insulated oxide (PIOX) layers are implemented under the source/drain region in bulk FinFETs. The improved short channel effect by controlling the sub-channel on the bottom part of the gate in bulk FinFETs, the decreased junction leakage current due to blocking the vertical leakage path by PIOX layers, and the increased hot carrier lifetime can be applicable to future DRAM cell transistors.
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