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An extremely accurate yet simple form of the charge-sheet model (CSM) is developed using the third-order Hermite interpolation polynomial to model the inversion charge in the channel. This new formulation of the drain current retains the same simplicity of the most advanced surface potential compact MOSFET models based on the symmetric linearisation method (SLM). However, unlike the SLM, it is developed...
In this paper a charge pump circuit is presented: it is based on PMOS pass transistors with dynamic control of the gate and body voltages. By controlling the gate and the bulk of each PMOS pass transistor, the voltage loss due to the device threshold is removed and the charge is pumped from one stage to the other with negligible voltage drop. Furthermore, the overdrive voltage of the pass transistors...
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