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Silicon (Si) carbide (SiC)-based power switching devices provide significant performance improvements compared to conventional Si devices. The superior characteristics enable considerable loss, size, and weight reduction of power converters in the powertrain of hybrid/electric vehicles. However, the fast switching capability of SiC devices renders them more vulnerable to parasitic inductances in the...
Rapid advancement of gallium nitride (GaN) based device technologies enables the possibility to design inverters that have superior performance capabilities compared to Si-based inverters. It is prevalently acknowledged that GaN-based switching devices outperform the Si-based counterparts in many aspects such as lower power consumption, and faster switching frequencies. GaN devices will benefit many...
The purpose of this paper is to analyze the impact of interconnection inductances to overvoltage during turn-off transient of silicon carbide (SiC) devices. To understand the switching behavior of the SiC devices, the ringing and overshoots of the voltage caused by the device capacitance and interconnection inductances are considered. Parametric studies are conducted to compare the influences of printed...
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