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The use of gallium nitride (GaN) high-electron mobility transistors (HEMTs) is a promising solution for a highly efficient motor drive design due to their high-switching speed and low on-state resistance. However, the higher reverse voltage drop of GaN HEMTs than that of the conventional silicon (Si) devices generates significant reverse conduction loss during the freewheeling period. This phenomenon...
This paper presents a closed-form design optimization of surface permanent magnet (SPM) machines using concentrated windings layout. Over the last few years, the interest in the use of SPM machines with a high pole number for low speed direct-drive applications has significantly increased. In this paper, the analytical design model is developed and particle swarm optimization (PSO) is applied for...
Silicon carbide (SiC) based devices are known to outperform Si devices in many aspects, such as lower power dissipation, higher operating temperatures, and higher switching frequencies. SiC devices will benefit hybrid vehicles when applied into the DC-DC converters and inverters as part of the electrical power conversion needed to drive the powertrain. Nevertheless, SiC devices can suffer from oscillations...
Rapid advancement of gallium nitride (GaN) based device technologies enables the possibility to design inverters that have superior performance capabilities compared to Si-based inverters. It is prevalently acknowledged that GaN-based switching devices outperform the Si-based counterparts in many aspects such as lower power consumption, and faster switching frequencies. GaN devices will benefit many...
Due to the superior physical properties of Silicon Carbide (SiC) material, SiC MOSFETs and Schottky diodes are becoming available for voltages higher than 600 V, which has been dominated by conventional silicon (Si) IGBTs and P-N diodes. Compared to the Si devices, SiC devices excel in many areas such as faster switching speed, lower conduction and switching losses, and higher temperature capability...
With the advancement of technology on wide bandgap materials such as silicon-carbide (SiC), there are now better choices of SiC power devices available than ever before. It is widely known that SiC-based switching devices provide significant performance improvements on many aspects including lower power dissipation, higher operating temperatures, and faster switching frequencies compared to conventional...
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