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2D semiconducting materials have immense potential for future electronics due to their atomically thin nature, which enables better scalability. While the channel scalability of 2D materials has been extensively studied, the current understanding of contact scaling in 2D devices is inconsistent and oversimplified. Here physically scaled contacts and asymmetrical contact measurements (ACMs) are combined...
Among the options for a field‐effect transistor (FET) channel that can outperform silicon at low voltages, the single‐walled carbon nanotube (CNT) is a strong contender. Composed of a single atomic layer of hexagonally arranged carbon atoms that form a cylinder of ∼1 nm diameter, the CNT is able to transport electrons with zero resistance (ballistic transport) while also having an intrinsic semiconducting...
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