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A hybrid field‐effect transistor (HyFET), superior for power electronic applications, can be created by harnessing the merits of two representative wide‐bandgap semiconductors, gallium nitride (GaN) and silicon carbide (SiC). Yet, the incompactness in the epitaxy techniques hinders the development of the HyFET—GaN is usually grown on on‐axis foreign substrates including SiC, whereas SiC homoepitaxy...
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