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We have demonstrated high-performance enhancement-mode or normally-off AlGaN/GaN fin-MOSHEMTs on a Si substrate with various fin width of 100–210 nm using atomic layer epitaxy (ALE) MgCaO as the gate dielectric. Through the fixed negative charges in MgCaO depleting the channel at the fin sidewalls, in contrast to the usual positive charges in atomic layer deposited amorphous Al2O3, the threshold voltage...
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