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Micropipe free c-plane 4H–SiC wafers were achieved by sublimation growth on the 4H–SiC {033¯8} seed. 4H–SiC {033¯8} seeds were obtained by inclining the c-plane to 〈011¯0〉 at 54.7°. A transmission X-ray topograph of the micropipe free c-plane wafer revealed that there were no macroscopic defects with lattice displacements. Crystal growth of undoped (vanadium-free) semi-insulating 6H–SiC was carried...
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