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The intrinsic Time Dependent Dielectric Breakdown properties of the spacer between gate and first level local interconnects are assessed for dielectrics and spacings compatible with N7 and beyond. The intrinsic reliability properties down to 3nm thickness of standard LPCVD Si3N4- and PECVD Si3N4-films as well as more advanced Al2O3- and low-k CVD SiN-layers have been studied using imec's pcap test...
The time dependent dielectric breakdown (TDDB) of four organo-silicate-glass (OSG) films with varying porosity (k=2.0, 2.5, 2.8 & 3.0) was investigated using metal-insulator-semiconductor (MIS) capacitors. Without any barrier, the dielectrics show lower TDDB-lifetimes under Cu ion drift conditions, where the OSG-2.8-film exhibits a better performance. Other results are that the damage caused by...
In this work we integrate an advanced k=2.3 spin-on polymer at 40nm ½ pitch. K-value restoration techniques are investigated and complete k-value restoration is demonstrated using an in-situ HeH2 plasma. An EUV compatible stack and a dielectric dual hard mask scheme is developed to pattern trenches with good uniformity and low litho-etch bias. The impact of scaling the dielectric spacing and of direct...
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