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A near-ultraviolet light emitting diode (LED) consisting of ZnO nanorods/MEH-PPV heterostructure and a layer of ZnS as the modification buffer layer is reported. Specially, the ZnO nanorods are grown on the ZnS hole-injecting buffer layer by hydrothermal method. Then the devices of ITO/ZnS/ZnO/ZnOnanorods/MEH-PPV/Al are prepared. Under forward bias, not only strong near-ultraviolet (N-UV) electroluminescence...
ZnO nanorods are synthesised by a hydrothermal method on ITO glass. Then ITO/ZnO/ZnO nanorod/MEH-PPV/Al heterostructure devices are fabricated. Under DC bias, ultraviolet (UV) electroluminescence (EL) at 380nm from ZnO band edge emission is observed. In addition, exciton emission of MEH-PPV at 580nm and defect related emission of ZnO nanorods at 640nm and 747nm are also detected. Upon increasing the...
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