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A Mott transistor that exhibits a large switching ratio of more than two orders at room temperature is demonstrated by using the electric double layer of an ionic liquid for gating on a strongly correlated electron system SmCoO3. From the thickness dependence of the on‐state channel current, we estimate the screening length of the SmCoO3 to be ∼5 nm. The good carrier confinement within the Thomas‐Fermi...
A prototype Mott transistor, the electric double layer transistor with a strained CaMnO3 thin film, is fabricated. As predicted by the strain phase diagram of electron‐doped manganite films, the device with the compressively strained CaMnO3 exhibits an immense conductivity modulation upon applying a tiny gate voltage of 2 V.
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