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A fully CMOS process compatible FinFET Dielectric RRAM (FIND RRAM) is firstly proposed and demonstrated by 1kbit RRAM macro on 16nm standard FinFET CMOS logic platform. The new 16nm low voltage FIND RRAM consists of one FinFET transistor for select gate and an HfO2-based resistive film for a storage node of the cell. The FIND RRAM largely improves the set and reset characteristics by the locally enhanced...
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