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In this paper we show that tunnel field effect transistors (TFETs) biased in the subthreshold region promise several advantages for low-power/high-frequency analog IC applications (e.g. GHz operation with sub-0.1 mW power consumption). Analytical and TCAD models for graphene nano-ribbon (GNR) and InAs/GaSb nanowire TFETs are employed, respectively, for the first time in subthreshold analog circuit...
The first fabrication of a III‐V tunnel field‐effect transistor (TFET) with tunneling directed perpendicular to the gate is reported. This new transistor geometry utilizes an InAs/Al0.45Ga0.55Sb staggered‐gap tunnel junction intended for high on current and steep subthreshold swing. The first measurements of the transistor transport properties at room temperature and ‐50 °C are provided. Tunneling...
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