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GaN MOSHEMT or MOSFET on top of conducting (drift layer and drain electrode) layers is a building block for vertical GaN VDMOS power transistors. GaN MOSHEMTs incorporating a polarization-doped p-AlGaN layer as the back barrier on top of conducting layers is named as PolarMOSH. In this work, we present a comparative study of PolarMOSH fabricated on SiC and free-standing GaN substrates. PolarMOSH wafers...
Ultra-thin body pseudomorphic GaN-on-Insulator Quantum Well FETs with MBE-regrown contacts have recently been realized as a fundamentally new strategy to create GaN CMOS-like technology that can support scaling down to ∼10 nm, similar to UTBSOI [1]. The demonstration vehicle [2] used AlN-on-Sapphire templates, which have a large lattice mismatch with thick AlN layers, and very poor thermal conductivity...
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