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Recently, Ga2O3 has become an attractive material for both power electronic and optoelectronic device applications since large-size electronic-grade Ga2O3 substrates can be readily produced by melt-grown methods. Furthermore, high quality epitaxy and n-type doping schemes have been demonstrated [1, 2]. Due to its ultra-wide band gap (∼4.5–4.9 eV), Ga2O3 is estimated to have a critical breakdown field...
GaN vertical power devices have many advantage over lateral device in device scaling, reliability and thermal management, etc. Traditional power transistors employ p-type pockets to achieve E-mode, RESURF and avalanche capabilities. However, this topology in GaN vertical power transistors has been challenging to implement [1] due to the difficulty to achieve selective area doping without compromising...
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