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Wide-bandgap materials, particularly Gallium Nitride, have emerged as the platform underlying many of the most promising technologies in the high-power and high-frequency domain. However, GaN p-channel devices lag far behind their popular n-channel counterparts, due to lower mobilities as well as difficulties in doping and forming ohmic contacts. There is a strong need for wide-bandgap p-channel FETs...
GaN vertical power devices have many advantage over lateral device in device scaling, reliability and thermal management, etc. Traditional power transistors employ p-type pockets to achieve E-mode, RESURF and avalanche capabilities. However, this topology in GaN vertical power transistors has been challenging to implement [1] due to the difficulty to achieve selective area doping without compromising...
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