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Dynamic variability of 28nm FD-SOI high density SRAMs has been directly measured and carefully modeled using a new technique based on the Supply Read Retention Voltage (SRRV) metric. It is proven that, for this technology, N&PBTI induced variability has only a small impact on the SRAM read stability after 10 years working at operating conditions.
The paper presents a new methodology to model the dynamic variability of SRAM cell in 28nm FDSOI technology. This approach can be easily integrated into SPICE and used for circuit degradation simulation. It is based on two successful models that showed good correlation with experimental data. Using only stress measurements made at transistors level we are able to simulate the degradation obtained...
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