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We have studied the structural evolution of the high density interfacial layer around 10 Å thick in 40 Å thermal oxide observed by difference X-ray reflectivity (DXR) techniques during thermal annealing. Effects of interfacial stress are evaluated by grazing incidence X-ray diffraction. As the annealing proceeds, density of the interfacial layer decreased and got close to the value of the upper SiO...
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