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Terbium-doped SiCN (SiCN:Tb) thin films were deposited by rf magnetron reactive sputtering at 800°C. The as-prepared samples were characterized by XRD, FTIR, and XPS. The results showed that SiCN:Tb films mainly contained both SiC and Si 3 N 4 nano-compositions with complicated chemical bond networks. Photoluminescence measurements indicated that the undoped SiCN films exhibited a...
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