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A broadband highly linear IQ modulator using a 0.5-mum enhancement/depletion-pseudomorphic high-electron mobility transistor process is presented in this letter. An innovative broadside/edge coupler is proposed to apply to the IQ modulator. The chip size is only 1times1 mm2, including radio frequency and baseband PADs. The sideband and local oscillation suppressions of the modulator are better than...
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