The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Significant shifts in threshold voltage have been observed during 10-keV X-ray irradiation of passivated and unpassivated AlGaN/GaN HEMTs. Oxygen and hydrogen impurities are found to contribute to differences in threshold voltage shifts and transconductance degradation for the passivated and unpassivated devices.
A tunable wavelength laser system and high resolution transient capture system are introduced to characterize transients in high mobility MOSFETs. The new setup enables resolution of fast transient signals and understanding of charge collection mechanisms.
A comprehensive data set of heavy-ion induced single-event transients has been collected for inverter chains fabricated in the IBM 32nm partially-depleted silicon-on-insulator technology across various bias voltages, transistor variants, ion energies and angles of incidence.
We discuss total ionizing dose effects and reliability of graphene-based electronics and non-volatile memory devices. The degradation after radiation exposure of these structures derives primarily from surface oxygen adsorption. Excellent stability and memory retention are observed for ionizing radiation exposure or constant-voltage stress. Cycling of the memory state leads to a significant degradation...
Irradiated Ge pMOSFETs have been characterized via charge pumping (ICP) and 1/ƒ-noise. The noise increases much more with irradiation than ICP, showing that bulk oxide traps affect the noise more than interface traps.
Enhanced rates of oxide growth have been observed on silicon when exposed to high-energy x-ray irradiation. This observed effect could potentially be utilized for remote total ionizing dose-sensing applications.
Low-frequency noise measurements and density functional theory calculations are combined to show that N-anti-site and C impurity defects can lead to changes in the low frequency noise of GaN/AlGaN HEMTs fabricated with three typical process conditions. Implications for device reliability are discussed.
The high body doping inherent in sub-100 nm partially-depleted SOI devices tends to mitigate the sensitivity to TID-induced leakage, providing that the doping reaches the STI sidewalls and back channel. Measured TID response on 45 nm NMOS SOI is consistent with trends observed in simulations.
Ionizing irradiation effects on MBS (metal-BOX-silicon) have been studied in this paper. Through pre- and post-irradiation high-frequency (HF) C-V curves of MBS of several samples in which fluorine was implanted into BOX of SIMOX, it was found that PD fluoridated SIMOX is beneficial to harden buried oxide layer
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.