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The total-dose radiation tolerance of 32-nm nFETs is investigated. nFETs built in 32-nm RF-CMOS-on-SOI technology with high-k dielectrics show increased off-state leakage current and electron trapping in the gate oxide. The impact of CMOS-on-SOI technology scaling (from 65-nm to 32-nm) on the total-dose radiation tolerance and hot-carrier reliability (HCR) is investigated through both experiments...
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