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The dispersion properties of the ultrathin spoof slow-wave plasmonic waveguide based on different ultrathin metal strip grooves have been simulated using the finite element method. The dispersion characteristics of the four different surface plasmon polariton (SPP) waves are thoroughly analyzed by the dispersion curves, electric intensity distribution, and power flow distribution. As a conclusion,...
Ultrathin GeSn channels were epitaxially grown on Si(111) and (001) substrates using solid source molecular beam epitaxy. Well-behaved GeSn quantum well (QW) pTFETs and pMOSFETs were fabricated on Si. GeSn QW pMOSFETs on Si(111) demonstrate a high effective hole mobility of 505 cm2/Vs, indicating the high crystallinity of the GeSn material. GeSn QW pTFETs on Si(111) outperform the devices on Si(001)...
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