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Significant efforts have been reported on oxide dielectrics on GaN and their role on device performance. It has been noted by several researchers [1, 2] that a few monolayers of native Ga2O3 decorate the GaN surface due to the spontaneous termination of the Ga-atoms with Oxygen. In an attempt to characterize the quality of Ga2O3 and GaN interfaces and evaluate its band offset on GaN, we have successfully...
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