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FREEDM-Pair is an innovative power semiconductor switch which reduces the loss and cost through the hybrid integration of a Si IGBT and a SiC MOSFET. During the turn-off of the FREEDM-Pair, the Si IGBT is turned off first under ZVS condition and after a carefully selected delay time, the Si MOSFET is turn-off. In this way, the IGBT's turn-off loss is significantly reduced due to the ZVS turn-off condition...
The newly proposed FREEDM-Pair is an ideal and economical solution to address high cost issue in high power SiC power devices. The FREEDM-Pair, in which a Si IGBT and a SiC JFET are connected in parallel, combines the advantages of SiC JFET's low switching losses and Si IGBT's superior forward conduction characteristics. One issue of the JFET based FREEDM-Pair is the incompatible gate drive voltage...
In order to better assist researchers to select the appropriate power device for medium voltage power electronics applications, this paper presents a comparative evaluation on three typical 6kV level Si and SiC power devices, including 6.5kV/25A Si IGBT from ABB, 6.5kV/15A normally off SiC JFET from USCi and a FREEDM System Center developed 6kV/26A SiC series-connected JFET. The 6.5kV Si IGBT and...
6.5kV Si IGBTs have been used widely in median voltage drives, HVDC, FACTs and traction systems. However, the large switching losses of the Si IGBT limit its switching frequency to only 100Hz to 1kHz. On the other hand, wide bandgap (WBG)power devices such as Silicon Carbide (SiC) MOSFET or JFET have demonstrated their superior advantages over Si IGBT, especially in terms of significantly reduced...
A 6.5 kV 25 A dual IGBT module is customized and packaged specially for high voltage low current application like solid state transformer and its characteristics and losses have been tested under the low current operation and compared with 10 kV SiC MOSFET. Based on the test results, the switching losses under different frequencies in a 20 kVA Solid-State Transformer (SST) has been calculated for...
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