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High speed, small-size and low-power consuming devices and systems is the considerable solution for next generation technological solution. The search for new principle of operation of the small-size, high speed and low-power device is becoming more and more important. Hear we studied two dimensional SOI and SON Inverter in nano scale, as well as Power dissipation and Delay is being calculated. We...
In this work, we have used the novel concept of linearly graded binary alloy, as gate material in the popular structure of underlap symmetric Double Gate (DG) MOSFET and developed an analytical model to study the potential distribution in the gate overlap and underlap of our proposed structure. Based on this potential model, an overall performance comparison of the underlap DG MOS with and without...
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