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Ion-induced, time-resolved charge-collection measurements for p-channel AlGaSb/InGaSb field-effect transistors are reported for a range of gate and drain bias conditions. The transient response reveals two distinct contributions: a faster initial response (ns) followed by a slower, ns, relaxation. The slower contribution depends sensitively on the applied gate bias, is suppressed when the...
The first ion-induced, time-resolved charge-collection measurements for p-channel AlGaSb/InGaSb field-effect transistors are reported. The transient response reveals two distinct decay regions; a fast initial decay (< 1 ns) followed by a slower decay (> 10 ns). The slow decay is associated with charge enhancement processes, which are explained by electron trapping and de-trapping via deep-level...
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