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We quantitatively compared the parasitic capacitance of the planar FETs and the DG FinFETs. Optimization with a fixed Sfin-to-Hfin ratio significantly reduces Cpara/W, which renders DG FinFETs comparable to planar FETs. Process variation on Wfin and Hfin should be controlled, otherwise, the Cpara uniformity will be worse for DG FinFETs than it is planar FETs.
The hot-carrier (HC) effect in high-/metal-gate nMOSFETs is characterized using radio-frequency (RF) small-signal parameter analysis. To explain a novel HC degradation of RF small-signal parameters, we propose a modified surface channel resistance model that can be applied to not only conventional /poly-Si-gate nMOSFETs but also high-/metal-gate nMOSFETs.
RF performances of 100-nm metal gate/high-k dielectric nMOSFET and parameters degradation by hot carrier injection to apply to RF integrated circuits are investigated. The attained nMOSFETs RF performances are 132-GHz fT and 44-GHz fmax. In addition to RF figures of merit (FOM, fT and fmax), variation of capacitance and resistance is monitored to study hot carrier effects.
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